參數(shù)資料
型號: HY62V8200BLLSR-I
廠商: Hynix Semiconductor Inc.
英文描述: HY62V8200B Series 256Kx8bit CMOS SRAM
中文描述: HY62V8200B系列256Kx8bit CMOS SRAM的
文件頁數(shù): 1/12頁
文件大?。?/td> 187K
代理商: HY62V8200BLLSR-I
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 06 / Apr. 2001 Hynix Semiconductor
HY62V8200B Series
256Kx8bit CMOS SRAM
Document Title
256K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
03 Initial Revision History Insert Jul.29.2000 Final
Revised
- Improved operating current
Icc1 : 60mA -> 35mA
04 Change the Notch Location of sTSOP Sep.04.2000 Final
- Left-Top => Left-Center
05 Marking Information Add Dec.04.2000 Final
Revised
- AC Test Condition Add : 5pF Test Load
06 Changed Logo Apr.30.2001 Final
-
HYUNDAI -> hynix
-
Marking Information Change
相關(guān)PDF資料
PDF描述
HY62V8200BLLST HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLST-E HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLST-I HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLT1 HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLT1-E HY62V8200B Series 256Kx8bit CMOS SRAM
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