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參數(shù)資料
| 型號： | HY62V8200BLLR1 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | HY62V8200B Series 256Kx8bit CMOS SRAM |
| 中文描述： | HY62V8200B系列256Kx8bit CMOS SRAM的 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 187K |
| 代理商： | HY62V8200BLLR1 |
Y62V8200B Series
AC CHARACTERISTICS
Vcc= 3.0V~3.6V, T
A
= 0
°
C to 70
°
C/ -25
°
C to 85
°
C(E)/ -40
°
C to 85
°
C(I), unless otherwise specified
Symbol
#
Parameter
Rev 06 / Apr. 2001
4
-70
-85
-10
Min.
Max.
Min.
Max.
Min.
Max.
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
70
-
-
-
10
5
0
0
15
-
85
-
-
-
10
5
0
0
15
-
100
-
-
-
10
5
0
0
15
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
40
-
-
20
20
-
85
85
45
-
-
25
25
-
100
100
50
-
-
30
30
-
10
11
12
13
14
15
16
17
18
19
AC TEST CONDITIONS
T
A
= 0
°
C to 70
°
C / -25
°
C to 85
°
C (E)/ -40
°
C to 85
°
C (I), unless otherwise specified
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
Others
AC TEST LOADS
TTL
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
85
70
70
0
60
0
0
35
0
5
-
-
-
-
-
-
100
80
80
0
70
0
0
40
0
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
25
-
-
-
30
-
-
-
Value
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
Note : 1 Including jig and scope capacitance
CL(1)
READ CYCLE
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62V8200BLLR1-E | HY62V8200B Series 256Kx8bit CMOS SRAM |
| HY62V8200BLLR1-I | HY62V8200B Series 256Kx8bit CMOS SRAM |
| HY62V8200BLLSR | HY62V8200B Series 256Kx8bit CMOS SRAM |
| HY62V8200BLLSR-E | HY62V8200B Series 256Kx8bit CMOS SRAM |
| HY62V8200BLLSR-I | HY62V8200B Series 256Kx8bit CMOS SRAM |
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