參數(shù)資料
型號(hào): HY62UF08401C-I
廠商: Hynix Semiconductor Inc.
英文描述: High Speed, Super Low Power and 4Mbit Full CMOS SRAM
中文描述: 高速,超低功耗和4Mbit全CMOS SRAM的
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 152K
代理商: HY62UF08401C-I
HY62UF08401C Series
DESCRIPTION
The HY62UF08401C is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
512K words by 8bits. The HY62UF08401C uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
Rev.02 / Jun.01
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup
-. 1.2V(min) data retention
Standard pin configuration
-. 32 - sTSOP - 8X13.4(Standard)
Standby
Current(uA)
LL
15
Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
SL
6
Temperature
(
°
C)
HY62UF08401C-I
Note 1. I : Industrial
2. Current value is max.
PIN CONNECTION BLOCK DIAGRAM
2.7~3.3
55/70
5
-40~85
PIN DESCRIPTION
Pin Name
/CS
Chip Select
/WE
Write Enable
/OE
Output Enable
A0 ~ A18
Address Input
Pin Function
Pin Name
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Data Input/Output
Power (2.7V~3.3V)
Ground
MEMORY ARRAY
512K x 8
ROW
DECODER
S
W
D
B
C
D
B
D
P
A
B
A0
A18
/OE
/WE
/CS
I/O1
I/O8
A3
A4
17
16
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A11
A9
A8
A13
/WE
A18
A15
VCC
A17
A16
A14
A12
A7
A6
A5
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
32-sTSOP Forward
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY62UF08401C-SS(I) 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM
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HY62UF08401C-SSI 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM
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