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參數(shù)資料
| 型號(hào)： | HY62CT08081E-I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 32Kx8bit CMOS SRAM |
| 中文描述： | 32Kx8bit CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 186K |
| 代理商： | HY62CT08081E-I |
HY62CT08081E Series
TIMING DIAGRAM
READ CYCLE 1
Rev 04 / Apr. 2001
6
ADDR
OE
CS
Data
Out
Note(READ CYCLE):
1. t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, t
CHZ
max. is less than t
CLZ
min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
Data Valid
tRC
tACS
tCLZ
tOE
tOLZ
tAA
tOH
tOHZ
tCHZ
High-Z
tAA
Data Valid
Previous Data
tOH
tOH
ADDR
Data
Out
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= V
IL.
3. /OE =V
IL
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62KF08802B | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KF08401C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KF08401C-DI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-DS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-SI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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