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參數(shù)資料
| 型號： | HY62CT08081E-I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 32Kx8bit CMOS SRAM |
| 中文描述： | 32Kx8bit CMOS SRAM的 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 186K |
| 代理商： | HY62CT08081E-I |
HY62CT08081E Series
ORDERING INFORMATION
Part No.
Speed
Power
Temp
HY62CT08081E-DPC
55/70/85
LL-part
0 to 70
°
C
HY62CT08081E-DPE
55/70/85
LL-part
-25 to 85
°
C
HY62CT08081E-DPI
55/70/85
LL-part
-40 to 85
°
C
HY62CT08081E-DGC
55/70/85
LL-part
0 to 70
°
C
HY62CT08081E-DGE
55/70/85
LL-part
-25 to 85
°
C
HY62CT08081E-DGI
55/70/85
LL-part
-40 to 85
°
C
HY62CT08081E-DTC
55/70/85
LL-part
0 to 70
°
C
HY62CT08081E-DTE
55/70/85
LL-part
-25 to 85
°
C
HY62CT08081E-DTI
55/70/85
LL-part
-40 to 85
°
C
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Vcc, V
IN,
V
OUT
Power Supply, Input/Output Voltage
HY62CT08081E-C
HY62CT08081E-E
HY62CT08081E-I
T
STG
Storage Temperature
P
D
Power Dissipation
I
OUT
Data Output Current
T
SOLDER
Lead Soldering Temperature & Time
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Vcc
Power Supply Voltage
4.5
5.0
Vss
Ground
0
0
V
IH
Input High Voltage
2.2
-
V
IL
Input Low Voltage
-0.3
(1)
-
Note
1. V
IL
= -3.0V for pulse width less than 50ns
Rev 04 / Apr. 2001
2
Package
PDIP
SOP
TSOP-I Standard
Rating
-0.3 to 7.0
0 to 70
-25 to 85
-40 to 85
-65 to 150
1.0
50
260
10
Unit
V
°
C
°
C
°
C
°
C
W
mA
T
A
Operating Temperature
°
C
sec
Max.
5.5
0
Vcc+0.3
0.8
Unit
V
V
V
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62KF08802B | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KF08401C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KF08401C-DI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-DS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-SI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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