參數(shù)資料
型號(hào)： HY5W26CF-S
英文描述： SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
中文描述： 內(nèi)存| 4X2MX16 |的CMOS | BGA封裝| 54PIN |塑料
文件頁(yè)數(shù)： 8/24頁(yè)
文件大?。?/td> 221K
代理商： HY5W26CF-S
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T
HY5W26CF / HY57W281620HCT
Rev. 1.2 / Nov. 01
9
Precharge
The Precharge command is used to close the open row in a particular bank or the open row in all banks. When the precharge
command is issued with address A10, high, then all banks will be precharged, and If A10 is low, the open row in a particular
bank will be precharged. The bank(s) will be available when the minimum tRP time is met after the precharge command is
issued.
Auto Precharge
The Auto Precharge command is issued to close the open row in a particular bank after READ or WRITE operation. If A10
is high when a READ or WRITE command is issued, the READ or WRITE with Auto Precharge is initiated.
Burst Termination
The Burst Termination is used to terminate the burst operation. This function can be accomplished by asserting a Burst Stop
command or a Precharge command during a burst READ or WRITE operation. The Precharge command interrupts a burst
cycle and close the active bank, and the Burst Stop command terminates the existing burst operation leave the bank open.
Data Mask
The Data Mask comamnd is used to mask READ or WRITE data. During a READ operation, When this command is issued,
data ouputs are disabled and become high impedance after two clock delay. During a WRITE operation, When this command
is issued, data inputs can’t be written with no clock delay.
Clock Suspend
The Clock Suspend command is used to suspend the internal clock of DRAM. During normal access mode, CKE is keeping
High. When CKE is low, it freezes the internal clock and extends data Read and Write operations.
Power Down
The Power Down command is used to reduce standby current. Before this command is issued, all banks must be precharged
and tRP must be passed after a precharge command. Once the Power Down command is initiated by keeping CKE low, all
of the input buffer except CKE are gated off.
Auto Refresh
The Auto Refresh command is used during normal operation and is similar to CBR refresh in Coventional DRAMs. This com-
mand must be issued each time a refresh is required. When an Auto Refresh command is issued , the address bits is “Don’t
care”, because the specific address bits is generated by internal refresh address counter.
Self Refresh
The Self Refresh command is used to retain cell data in the Low Power SDRAM. In the Self Refresh mode, the Low Power
SDRAM operates refresh cycle asynchronously. The Self Refresh command is initiated like an Auto Refresh command ex-
cept CKE is disabled(Low). The Low Power SDRAM can accomplish an special Self Refresh operation by the specific
modes(TCSR, PASR) programmed in extended mode registers. The Low Power SDRAM can control the refresh rate by the
temperature value of TCSR (Temperature Compensated Self Refresh) and select the memory array to be refreshed by the
value of PASR(Partial Array Self Refresh). The Low Power SDRAM can reduce the self refresh current(IDD6) by using these
two modes.
Deep Power Down
The Deep Power Down Mode is used to achieve maximum power reduction by cutting the power of the whole memory array
of the devices. For more information, see the special operation for Low Power consumption of this data sheet.
相關(guān)PDF資料
PDF描述
HY5W2A6CLF-H x16 SDRAM
HY5W2A6CLF-P SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
HY5W2A6CLF-S x16 SDRAM
HY5W2A6CSF-H SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
HY5W2A6CSF-P x16 SDRAM
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HY5W2A6CLF-P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC
HY5W2A6CLF-S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM
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