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參數(shù)資料
| 型號： | HY5W26CF-S |
| 英文描述： | SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC |
| 中文描述： | 內(nèi)存| 4X2MX16 |的CMOS | BGA封裝| 54PIN |塑料 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大?。?/td> | 221K |
| 代理商： | HY5W26CF-S |
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T
HY5W26CF / HY57W281620HCT
Rev. 1.2 / Nov. 01
14
Note :
1. H: Logic High, L: Logic Low, X: Don’t care, BA: Bank Address, AP: Auto Precharge.
2. All entries assume that CKE was active during the preceding clock cycle.
3. If both banks are idle and CKE is inactive, then in power down cycle
4. Illegal to bank in specified states. Function may be legal in the bank indicated by Bank Address, depending
on the state of that bank.
5. If both banks are idle and CKE is inactive, then Self Refresh mode.
6. Illegal if tRCD is not satisfied.
7. Illegal if tRAS is not satisfied.
8. Must satisfy burst interrupt condition.
9. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
10. Must mask preceding data which don’t satisfy tDPL.
11. Illegal if tRRD is not satisfied
12. Illegal for single bank, but legal for other banks in multi-bank devices.
13. Illegal for all banks.
14. Mode Register Set and Extended Mode Register Set is same command truth table except BA1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5W2A6CLF-H | x16 SDRAM |
| HY5W2A6CLF-P | SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC |
| HY5W2A6CLF-S | x16 SDRAM |
| HY5W2A6CSF-H | SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC |
| HY5W2A6CSF-P | x16 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5W2A2(L/S)F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx32|2.5V|4K|H|Handy SDRAM - 128M |
| HY5W2A2(L/S)FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx32|2.5V|4K|H|Handy SDRAM - 128M |
| HY5W2A6CLF-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY5W2A6CLF-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC |
| HY5W2A6CLF-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
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