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參數(shù)資料
| 型號(hào)： | HY5V62CF-7 |
| 英文描述： | x32 SDRAM |
| 中文描述： | X32號(hào)，內(nèi)存 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 201K |
| 代理商： | HY5V62CF-7 |
Rev. 0.4/Nov. 01
5
HY5V62CF
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA=0 to 70
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V
2.V
DD/
V
DDQ
(min) is 3.15V for HY5V62CF-7/S
3.V
IH
(max) is acceptable 5.6V AC pulse width with
≤
3ns of duration with no input clamp diodes
4.V
IL
(min) is acceptable -2.0V AC pulse width with
≤3
ns of duration with no input clamp diodes
AC OPERATING CONDITION
(TA=0 to 70
°
C
, 3.0V
≤
V
DD
≤
3.6V, V
SS
=0V - Note1)
Note :
1.3.15V
≤
V
DD
≤
3.6V is applied for HY5V62CF-7/S
2.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)
For details, refer to AC/DC output load circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD,
V
DDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature
Time
T
SOLDER
260
10
°
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1,2
Input high voltage
V
IH
2.0
3.0
V
DDQ
+ 0.3
V
1,3
Input low voltage
V
IL
V
SSQ
- 0.3
0
0.8
V
1,4
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
2
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| HY5V66EF6-6 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
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