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參數(shù)資料
| 型號(hào)： | HY5V22(L)F(P)-S |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| 中文描述： | 4銀行× 1米x 32Bit的同步DRAM |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大?。?/td> | 913K |
| 代理商： | HY5V22(L)F(P)-S |
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HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
Revision History
Revision No.
History
Remark
0.1
Defined Preliminary Specification
0.2
1) Modified FBGA Ball Configuration Typo.
2) Changed Functional Block Diagram from A10 to A11.
3) Changed V
DD
min from 3.0V to 3.135V.
4) Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.
5) Insert t
AC2
Value.
6) Insdrt t
RAS
& CLK Value.
0.3
Defined I
DD
Spec.
0.4
Delited Preliminary.
0.5
Changed I
DD
Spec.
0.6
133MHz Speed Added
0.7
Changed FBGA Package Size from 11x13 to 8x13.
0.8
1) Changed V
DD
min from 3.135V to 3.0V.
2) Changed V
IL
min from V
SSQ
-0.3V to -0.3V.
0.9
Modified of size erra. (Page15)
(Equation :
13.00
±
10
-> 13.00
±
0.10)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V283220(L)T(P)-P | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220(L)T(P)-S | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220(L)T(P)-5 | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220(L)T(P)-55 | 4 Banks x 1M x 32Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5V22LFP-S | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V22LF-S | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V26CF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M |
| HY5V26CF-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY5V26CF-6I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
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