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參數(shù)資料
| 型號(hào)： | HY5V22(L)F(P)-P |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| 中文描述： | 4銀行× 1米x 32Bit的同步DRAM |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大小： | 913K |
| 代理商： | HY5V22(L)F(P)-P |
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Rev. 0.9 / July 2004
8
HY57V283220(L)T(P) / HY5V22(L)F(P)
DC CHARACTERISTICS II
(DC operating conditions unless otherwise noted)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V283220T(P)(HY5V22F(P))-5/55/6/7/H/8/P/S
4.HY57V283220LT(P)(HY5V22LF(P))-5/55/6/7/H/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-5
-55
-6
-7
-H
-8
-P
S
Operating Current
IDD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
120
120
110
100
100
100
90
90
mA
1
Precharge Standby Current
in power down mode
IDD2P
CKE
≤
V
IL
(max), t
CK
= 10ns
2
mA
IDD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
1
Precharge Standby Current
in non power down mode
IDD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= 10ns Input signals are changed one
time during 2clks. All other pins
≥
VDD-
0.2V or
≤
0.2V
14
mA
IDD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
9
Active Standby Current
in power down mode
IDD3P
CKE
≤
V
IL
(max), t
CK
= 10ns
7
mA
IDD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
6
Active Standby Current
in non power down mode
IDD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CK
= 10ns
Input signals are changed
one time during 2clks. All other pins
≥
V
DD
-0.2V or
≤
0.2V
17
mA
IDD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
13
Burst Mode Operating
Current
IDD4
t
t
CK
≥
t
CK
(min),
I
OL
=0mA
All banks active
CL=3
230
220
200
180
180
150
130
130
mA
1
CL=2
-
-
-
-
-
-
130
130
Auto Refresh Current
IDD5
t
RC
≥
t
RC
(min), All banks active
170
160
150
140
140
140
140
140
mA
2
Self Refresh Current
IDD6
CKE
≤
0.2V
2
mA
3
0.8
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5V22(L)F(P)-S | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| HY57V283220(L)T(P)-P | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220(L)T(P)-S | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220T | 4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220(L)T(P)-5 | 4 Banks x 1M x 32Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5V22LFP-P | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V22LFP-S | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V22LF-S | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY5V26CF | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M |
| HY5V26CF-6 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x16 SDRAM |
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