參數(shù)資料
型號(hào)： HY5S6B6DSF-SE
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 4Banks x1M x 16bits Synchronous DRAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝： 0.80 MM PITCH, FBGA-54
文件頁(yè)數(shù)： 12/27頁(yè)
文件大小： 368K
代理商： HY5S6B6DSF-SE
Rev 0.3 / July 2004
12
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
CURRENT STATE TRUTH TABLE
(Sheet 1 of 4)
Current
State
Command
Action
Notes
CS RAS CAS WE
BA0/
BA1
A11-A0
Description
idle
L
L
L
L
OP CODE
Mode Register Set
Set the Mode Register
14
L
L
L
H
X
X
Auto or Self Refresh
Start Auto or Self Refresh
5
L
L
H
L
BA
X
Precharge
No Operation
L
L
H
H
BA
Row Add.
Bank Activate
Activate the specified
bank and row
L
H
L
L
BA
Col Add.
A10
Write/WriteAP
ILLEGAL
4
L
H
L
H
BA
Col Add.
A10
Read/ReadAP
ILLEGAL
4
L
H
H
H
X
X
No Operation
No Operation
3
H
X
X
X
X
X
Device Deselect
No Operation or Power
Down
3
Row
Active
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh
ILLEGAL
13
L
L
H
L
BA
X
Precharge
Precharge
7
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
4
L
H
L
L
BA
Col Add.
A10
Write/WriteAP
Start Write : optional
AP(A10=H)
6
L
H
L
H
BA
Col Add.
A10
Read/ReadAP
Start Read : optional
AP(A10=H)
6
L
H
H
H
X
X
No Operation
No Operation
H
X
X
X
X
X
Device Deselect
No Operation
Read
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh
ILLEGAL
13
L
L
H
L
BA
X
Precharge
Termination Burst: Start
the Precharge
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
4
L
H
L
L
BA
Col Add.
A10
Write/WriteAP
Termination Burst: Start
Write(optional AP)
8,9
L
H
L
H
BA
Col Add.
A10
Read/ReadAP
Termination Burst: Start
Read(optional AP)
8
L
H
H
H
X
X
No Operation
Continue the Burst
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