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參數(shù)資料
| 型號(hào)： | HY5S6B6DLF-SE |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4Banks x1M x 16bits Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | 0.80 MM PITCH, FBGA-54 |
| 文件頁(yè)數(shù)： | 7/27頁(yè) |
| 文件大小： | 368K |
| 代理商： | HY5S6B6DLF-SE |
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Rev 0.3 / July 2004
7
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
BASIC FUNCTIONAL DESCRIPTION
(Continued)
Extended Mode Register
BA1
1
BA0
0
A11
0
A10
0
A9
0
A8
0
A7
0
A6
A5
A4
0
A3
0
A2
A1
A0
DS
PASR
DS (Driver Strength)
A6
0
0
1
1
A5
0
1
0
1
Driver Strength
Full
1/2 Strength
1/4 Strength
Reserved
PASR
(Partial Array Self Refresh)
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
Self Refresh Coverage
All Banks
Half of Total Bank (BA1=0 or Bank 0,1)
Quarter of Total Bank (BA1=BA0=0 or Bank 0)
Reserved
Reserved
Half of Bank 0(Bank 0 and Row Address MSB=0)
Quarter of Bank 0(Bank 0 and Row Address 2 MSBs=0)
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5S6B6DSF-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSFP-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSFP-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY62256A | 32Kx8bit CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5S6B6DSF-BE | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSFP-BE | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSFP-SE | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-SE | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S7B2ALFP-6 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512M (16Mx32bit) Mobile SDRAM |
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