參數(shù)資料
型號(hào): HY5S6B6DLF-BE
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4Banks x1M x 16bits Synchronous DRAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
封裝: 0.80 MM PITCH, FBGA-54
文件頁(yè)數(shù): 15/27頁(yè)
文件大小: 368K
代理商: HY5S6B6DLF-BE
Rev 0.3 / July 2004
15
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
CURRENT STATE TRUTH TABLE
(Sheet 4 of 4)
Current
State
Command
Action
Notes
CS RAS CAS WE
BA0/
BA1
A11-A0
Description
Write
Recovering
H
X
X
X
X
X
Device Deselect
No Operation:
Row Active after t
DPL
Write
Recovering
with Auto
Precharge
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
13
L
L
H
L
BA
X
Precharge
ILLEGAL
4,13
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
4,12
L
H
L
L
BA
Col Add. A10
Write/WriteAP
ILLEGAL
4,12
L
H
L
H
BA
Col Add. A10
Read/ReadAP
ILLEGAL
4,9,12
L
H
H
H
X
X
No Operation
No Operation:
Precharge after t
DPL
H
X
X
X
X
X
Device Deselect
No Operation:
Precharge after t
DPL
Refreshing
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
13
L
L
H
L
BA
X
Precharge
ILLEGAL
13
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
13
L
H
L
L
BA
Col Add. A10
Write/WriteAP
ILLEGAL
13
L
H
L
H
BA
Col Add. A10
Read/ReadAP
ILLEGAL
13
L
H
H
H
X
X
No Operation
No Operation:
idle after t
RC
H
X
X
X
X
X
Device Deselect
No Operation:
idle after t
RC
Mode
Register
Accessing
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
13
L
L
H
L
BA
X
Precharge
ILLEGAL
13
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
13
L
H
L
L
BA
Col Add. A10
Write/WriteAP
ILLEGAL
13
L
H
L
H
BA
Col Add. A10
Read/ReadAP
ILLEGAL
13
L
H
H
H
X
X
No Operation
No Operation:
idle after 2 clock cycles
H
X
X
X
X
X
Device Deselect
No Operation:
idle after 2 clock cycles
相關(guān)PDF資料
PDF描述
HY5S6B6DLFP-BE 4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DLFP-SE 4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DLF-SE 4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSF-BE 4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSFP-BE 4Banks x1M x 16bits Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5S6B6DLFP-BE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DLFP-SE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DLF-SE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSF-BE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSFP-BE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM