參數(shù)資料
型號: HY5PS1G831F-E4
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gb DDR2 SDRAM
中文描述: 128M X 8 DDR DRAM, 0.5 ns, PBGA68
封裝: FBGA-68
文件頁數(shù): 18/33頁
文件大小: 540K
代理商: HY5PS1G831F-E4
Rev. 1.2 / Dec 2006
18
1
HY5PS1G431(L)F
1
HY5PS1G831(L)F
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
( 0
℃ ≤
T
CASE
≤ 95℃;
V
DDQ
= 1.8 V +/- 0.1V; V
DD
= 1.8V +/- 0.1V)
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for and 8 Bank device
will equal to tRP+1*tCK, where tRP are the values for a single bank prechrarge, which are shown in the
above table.
Parameter
Symbol
DDR2 400
DDR2 533
DDR2 667
DDR2 800
Units
Min
Max
Min
Max
Input capacitance, CK and CK
CCK
1.0
2.0
1.0
2.0
pF
Input capacitance delta, CK and CK
CDCK
x
0.25
x
0.25
pF
Input capacitance, all other input-only pins
CI
1.0
2.0
1.0
2.0
pF
Input capacitance delta, all other input-only pins
CDI
x
0.25
x
0.25
pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO
2.5
4.0
2.5
3.5
pF
Input/output capacitance delta, DQ, DM, DQS, DQS
CDIO
x
0.5
x
0.5
pF
Parameter
Symbol
256Mb 512Mb
1Gb
2Gb
4Gb
Units
Refresh to Active/Refresh command
time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI
0
℃≤
T
CASE
≤ 95℃
7.8
7.8
7.8
7.8
7.8
ns
85
℃<
T
CASE
≤ 95℃
3.9
3.9
3.9
3.9
3.9
ns
Speed
DDR2-667
DDR2-533
DDR2-400
Units
Bin(CL-tRCD-tRP)
5-5-5
4-4-4
3-3-3
Parameter
min
min
min
CAS Latency
5
4
3
tCK
tRCD
15
15
15
ns
tRPNote1
15
15
15
ns
tRAS
45
45
40
ns
tRC
60
60
55
ns
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