參數(shù)資料
型號(hào): HY5DU121622CTP-6
廠商: HYNIX SEMICONDUCTOR INC
元件分類(lèi): DRAM
英文描述: 512Mb(32Mx16) GDDR SDRAM
中文描述: 32M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁(yè)數(shù): 9/29頁(yè)
文件大?。?/td> 233K
代理商: HY5DU121622CTP-6
Rev. 0.3 / Apr. 2005
9
1
HY5DU121622CTP
OPERATION COMMAND TRUTH TABLE-I
Current
State
/ CS
/ RAS
/ CAS
/ WE
Address
Command
Action
IDLE
H
X
X
X
X
DSEL
NOP or power down
3
L
H
H
H
X
NOP
NOP or power down
3
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4
L
L
H
H
BA, RA
ACT
Row Activation
L
L
H
L
BA, AP
PRE/PALL
NOP
L
L
L
H
X
AREF/SREF
Auto Refresh or Self Refresh
5
L
L
L
L
OPCODE
MRS
Mode Register Set
ROW
ACTIVE
H
X
X
X
X
DSEL
NOP
L
H
H
H
X
NOP
NOP
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
Begin read : optional AP
6
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
Begin write : optional AP
6
L
L
H
H
BA, RA
ACT
ILLEGAL
4
L
L
H
L
BA, AP
PRE/PALL
Precharge
7
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
READ
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
Terminate burst
L
H
L
H
BA, CA, AP
READ/READAP
Term burst, new read:optional AP
8
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
4
L
L
H
L
BA, AP
PRE/PALL
Term burst, precharge
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
Term burst, new read:optional AP
8
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
Term burst, new write:optional AP
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參數(shù)描述
HY5DU121622CTP-X 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU121622DFP-D43 制造商:SK Hynix Inc 功能描述:
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HY5DU121622DFP-H 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU121622DFP-HI 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:512Mb DDR SDRAM