參數(shù)資料
型號(hào)： HY5DU121622CTP-6
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 512Mb(32Mx16) GDDR SDRAM
中文描述： 32M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁(yè)數(shù)： 22/29頁(yè)
文件大?。?/td> 233K
代理商： HY5DU121622CTP-6
Rev. 0.3 / Apr. 2005
22
1
HY5DU121622CTP
DC CHARACTERISTICS II
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Parameter
Symbol
Test Condition
Speed
Unit
Note
4
5
6
Operating Current
IDD0
One bank; Active - Precharge ; tRC=tRC(min);
tCK=tCK(min) ; DQ,DM and DQS inputs changing twice per
clock cycle; address and control inputs changing once per
clock cycle
150
130
120
mA
Operating Current
I
DD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min); address
and control inputs changing once per clock cycle
190
170
150
mA
Precharge Power
Down Standby
Current
I
DD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
15
10
10
mA
Idle Standby Current
I
DD2N
Vin>=Vih(min) or Vin=<Vil(max) for DQ, DQS and DM
35
35
35
mA
Active Power Down
Standby Current
I
DD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
45
45
45
mA
Active Standby
Current
I
DD3N
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge;
tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock
cycle
60
60
60
mA
Operating Current
I
DD4R
Burst=2; Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock cycle;
tCK=tCK(min); IOUT=0mA
230
210
190
mA
Operating Current
I
DD4W
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock cycle;
tCK=tCK(min); DQ, DM and DQS inputs changing twice per
clock cycle
250
230
210
Auto Refresh Current
I
DD5
tRC=tRFC(min) - 14*tCK for DDR400 at 200Mhz
280
260
240
Self Refresh Current
I
DD6
CKE =< 0.2V; External clock on; tCK=tCK(min)
5
5
5
mA
Operating Current -
Four Bank Operation
I
DD7
Four bank interleaving with BL=4, Refer to the following
page for detailed test condition
370
360
350
mA
相關(guān)PDF資料
PDF描述
HY5DU12822B CAP CERAMIC 15PF 50V NP0 0805
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU121622CTP-X 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU121622DFP-D43 制造商:SK Hynix Inc 功能描述:
HY5DU121622DFP-D43I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU121622DFP-H 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU121622DFP-HI 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
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