參數(shù)資料
型號: HY5DU121622CTP-4
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 512Mb(32Mx16) GDDR SDRAM
中文描述: 32M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù): 24/29頁
文件大小: 233K
代理商: HY5DU121622CTP-4
Rev. 0.3 / Apr. 2005
24
1
HY5DU121622CTP
AC Overshoot/ Undershoot Specification for Address and Control Pins
This specification is intended for devices with no clamp protection and is guaranteed by design
Overshoot/ Undershoot Specification for Data, Strobe, and Mask Pins
Parameter
Specification
Maximum peak amplitude allowed for overshoot (See Figure 1):
1.5V
Maximum peak amplitude allowed for undershoot (See Figure 1):
1.5V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 1):
4.5V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 1):
4.5V - ns
Parameter
Specification
Maximum peak amplitude allowed for overshoot (See Figure 2):
1.2V
Maximum peak amplitude allowed for undershoot (See Figure 2):
1.2V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 2):
2.4V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 2):
2.4V - ns
V
DD
0
1
2
3
4
5
6
0
+ 1
+ 2
+ 3
+ 4
+ 5
-1
-2
-3
Volts
(V)
Time(ns)
Undershoot
Ground
Max. area= 4.5V-ns
Overshoot
Max. amplitude= 1.5V
Figure 1: Address and Control AC Overshoot and Undershoot Definitio
V
DD
0
1
2
3
4
5
6
0
+ 1
+ 2
+ 3
+ 4
+ 5
-1
-2
-3
Volts
(V)
Time(ns)
Undershoot
Ground
Max. area= 2.4V-ns
Overshoot
Max. amplitude= 1.2V
Figure 2: DQ/ DM/ DQS AC Overshoot and Undershoot Definition
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