參數(shù)資料
型號(hào): HY5DU121622CLTP
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產(chǎn)品512Mb DDR SDRAM
文件頁(yè)數(shù): 20/31頁(yè)
文件大小: 253K
代理商: HY5DU121622CLTP
Rev. 1.0 / Mar. 2005
20
1
HY5DU12422C(L)TP
HY5DU12822C(L)TP
HY5DU121622C(L)TP
IDD Specification
128Mx4
64Mx8
Parameter
Symbol
Speed
Unit
DDR400B
DDR333
DDR266A
DDR266B
DDR200
Operating Current
IDD0
130
120
100
mA
Operating Current
IDD1
170
150
120
mA
Precharge Power Down Standby Current
IDD2P
10
mA
Idle Standby Current
IDD2F
30
mA
Idle Quiet Standby Current
IDD2Q
25
mA
Active Power Down Standby Current
IDD3P
35
mA
Active Standby Current
IDD3N
50
mA
Operating Current
IDD4R
200
180
160
mA
Operating Current
IDD4W
230
210
180
Auto Refresh Current
IDD5
245
225
205
Self Refresh Current
Normal
IDD6
5
mA
Low Power
2.5
mA
Operating Current - Four Bank
Operation
IDD7
400
350
290
mA
Parameter
Symbol
Speed
Unit
DDR400B
DDR333
DDR266A
DDR266B
DDR200
Operating Current
IDD0
130
120
100
mA
Operating Current
IDD1
170
150
120
mA
Precharge Power Down Standby Current
IDD2P
10
mA
Idle Standby Current
IDD2F
30
mA
Idle Quiet Standby Current
IDD2Q
25
mA
Active Power Down Standby Current
IDD3P
35
mA
Active Standby Current
IDD3N
50
mA
Operating Current
IDD4R
210
190
170
mA
Operating Current
IDD4W
230
210
180
Auto Refresh Current
IDD5
245
225
205
Self Refresh Current
Normal
IDD6
5
mA
Low Power
2.5
mA
Operating Current - Four Bank
Operation
IDD7
400
350
290
mA
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