- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385425 > HY5DS573222F (Hynix Semiconductor Inc.) 256M(8Mx32) GDDR SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY5DS573222F |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256M(8Mx32) GDDR SDRAM |
| 中文描述： | 256M（8Mx32）GDDR SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 10/28頁(yè) |
| 文件大小： | 326K |
| 代理商： | HY5DS573222F |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)當(dāng)前第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)
1
HY5DS573222F(P)
Rev. 1.0 / Feb. 2005
10
OPERATION COMMAND TRUTH TABLE - II
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
WRITE
L
L
H
H
BA, RA
ACT
ILLEGAL
4
L
L
H
L
BA, AP
PRE/PALL
Term burst, precharge
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
READ
WITH
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
PRE-
CHARGE
H
X
X
X
X
DSEL
NOP-Enter IDLE after tRP
L
H
H
H
X
NOP
NOP-Enter IDLE after tRP
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
NOP-Enter IDLE after tRP
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DS573222F-28 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-33 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-36 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-4 | 256M(8Mx32) GDDR SDRAM |
| HY5DS573222FP | 256M(8Mx32) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DS573222F-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222F-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
| HY5DS573222FP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M(8Mx32) GDDR SDRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。