參數(shù)資料
型號: HY5DS113222FM
廠商: Hynix Semiconductor Inc.
英文描述: 512M(16Mx32) GDDR SDRAM
中文描述: 512M(16Mx32)GDDR SDRAM內(nèi)存
文件頁數(shù): 30/30頁
文件大?。?/td> 431K
代理商: HY5DS113222FM
Rev. 0.1 / Oct. 2004
30
HY5DS113222FM(P)
PACKAGE INFORMATION
12mm x 12mm, 144ball Fine-pitch Ball Grid Array
12mm±0.1mm
12mm±0.1mm
[ Ball Location ]
Ball existing
Optional (Thermal ball, NC, No ball)
Depopulated ball
8.8mm
8.8mm
0.8mm
0.86mm±0.05
0.35mm±0.05
1.2mm±0.1mm
Detailed "A"
Detailed "A"
0.12mm
0.5mm Diameter
0.55Max
0.45 Min
(MO 205-D, AE in JEDEC)
相關(guān)PDF資料
PDF描述
HY5DS113222FM-28 512M(16Mx32) GDDR SDRAM
HY5DS113222FM-33 512M(16Mx32) GDDR SDRAM
HY5DS113222FM-36 512M(16Mx32) GDDR SDRAM
HY5DS113222FM-4 512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-28 512M(16Mx32) GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DS113222FM-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FM-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FM-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FM-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM
HY5DS113222FMP-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM