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參數資料
| 型號： | HY5DS113222FM |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512M(16Mx32) GDDR SDRAM |
| 中文描述： | 512M（16Mx32）GDDR SDRAM內存 |
| 文件頁數： | 13/30頁 |
| 文件大小： | 431K |
| 代理商： | HY5DS113222FM |
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Rev. 0.1 / Oct. 2004
13
HY5DS113222FM(P)
CKE FUNCTION TRUTH TABLE
Note :
When CKE=L, all DQ and DQS(0~3) must be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All command can be stored after 2 clocks from low to high transition of CKE.
3. Illegal if CK is suspended or stopped during the power down mode.
4. Self refresh can be entered only from the all banks idle state.
5. Disabling CK may cause malfunction of any bank which is in active state.
6. * Both CSO & CSI should be emabled, simultaneouly.
Current
State
CKEn-
1
CKEn
/CS0
/CS1
/RAS
/CAS
/WE
/ADD
Action
SELF
REFRESH
1
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit self refresh, enter idle after tSREX*
L
H
L
H
H
H
X
Exit self refresh, enter idle after tSREX*
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP, continue self refresh
POWER
DOWN
2
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit power down, enter idle*
L
H
L
H
H
H
X
Exit power down, enter idle*
L
H
L
H
H
L
X
ILLEGAL
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
NOP, continue power down mode
ALL BANKS
IDLE
4
H
H
X
X
X
X
X
See operation command truth table
H
L
L
L
L
H
X
Enter self refresh*
H
L
H
X
X
X
X
Exit power down*
H
L
L
H
H
H
X
Exit power down*
H
L
L
H
H
L
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
H
X
X
ILLEGAL
H
L
L
L
L
L
X
ILLEGAL
L
L
X
X
X
X
X
NOP
ANY STATE
OTHER
THAN
ABOVE
H
H
X
X
X
X
X
See operation command truth table
H
L
X
X
X
X
X
ILLEGAL
5
L
H
X
X
X
X
X
INVALID
L
L
X
X
X
X
X
INVALID
相關PDF資料 |
PDF描述 |
|---|---|
| HY5DS113222FM-28 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-33 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-36 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-4 | 512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-28 | 512M(16Mx32) GDDR SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY5DS113222FM-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FMP-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
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