- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385423 > HY57V651620BLTC-7 (HYNIX SEMICONDUCTOR INC) 4 Banks x 1M x 16Bit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | HY57V651620BLTC-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Banks x 1M x 16Bit Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 81K |
| 代理商： | HY57V651620BLTC-7 |
HY57V651620B
Rev. 1.9/Apr.01
7
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
2.Access times to be measured with input signals of 1v/ns edge rate
Parameter
S y m b o l
-55
-6
-7
-75
-8
-10P
-10S
-10
Unit
Note
Min
M a x
Min
M a x
Min
M a x
Min
M a x
Min
M a x
Min
M a x
Min
M a x
Min
M a x
System clock
cycle time
C A S Latency = 3
tCK3
55
1000
6
1000
7
1000
7.5
1000
8
1000
10
1000
10
1000
1 0
1 0 0 0
ns
C A S Latency = 2
tCK2
10
10
1 0
10
10
10
12
1 2
ns
Clock high pulse width
t C H W
2.75
-
2.5
-
2.5
-
2.5
-
3
-
3
-
3
-
3
-
ns
1
Clock low pulse width
tCLW
2.75
-
2.5
-
2.5
-
2.5
-
3
-
3
-
3
-
3
-
ns
1
Access time from
clock
C A S Latency = 3
tAC3
-
5.4
-
5.4
-
5.4
-
5.4
-
6
-
6
-
6
-
8
ns
2
C A S Latency = 2
tAC2
-
6
-
6
-
6
-
6
-
6
-
6
-
6
-
8
ns
Data-out hold time
t O H
2.5
-
2.7
-
2.7
-
2.7
-
3
-
3
-
3
-
3
-
ns
Data-Input setup time
t D S
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
3
-
ns
1
Data-Input hold time
tDH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
1
-
ns
1
Address setup time
t A S
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
3
-
ns
1
Address hold time
t A H
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
1
-
ns
1
CKE setup time
tCKS
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
3
-
ns
1
CKE hold time
tCKH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
1
-
ns
1
Command setup time
t C S
1.5
-
1.5
-
1.5
-
1.5
-
2
-
2
-
2
-
3
-
ns
1
C o m m a n d h o l d t i m e
tCH
0.8
-
0.8
-
0.8
-
0.8
-
1
-
1
-
1
-
1
-
ns
1
CLK to data output in low Z-time
tOLZ
1
-
1
-
1.5
-
1
-
1
-
1
-
1
-
1
-
ns
CLK to data output
in high Z-time
C A S Latency = 3
t O H Z 3
5.4
5.4
5.4
2.7
5.4
3
6
3
6
3
6
3
8
ns
C A S Latency = 2
t O H Z 2
3
6
3
6
3
6
3
6
3
8
ns
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V651620BLTC-75 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-8 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10P | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BTC-10S | 4 Banks x 1M x 16Bit Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V651620BLTC-75 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|6/7/75/10P/10S|SDR SDRAM - 64M |
| HY57V651620BLTC-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V651620BLTC-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。