• 參數(shù)資料
    型號(hào): HY57V651620BLTC-7
    廠商: HYNIX SEMICONDUCTOR INC
    元件分類: DRAM
    英文描述: 4 Banks x 1M x 16Bit Synchronous DRAM
    中文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
    封裝: 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
    文件頁數(shù): 1/12頁
    文件大?。?/td> 81K
    代理商: HY57V651620BLTC-7
    HY57V651620B
    4 Banks x 1M x 16Bit Synchronous DRAM
    This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
    circuits described. No patent licenses are implied.
    Rev. 1.9/Apr.01
    DESCRIPTION
    The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
    require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.
    HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchro-
    nized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
    voltage levels are compatible with LVTTL.
    Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
    by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of
    read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
    read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
    FEATURES
    Single 3.3
    ±
    0.3V power supply
    Note)
    All device pins are compatible with LVTTL interface
    JEDEC standard 400mil 54pin TSOP-II with 0.8mm
    of pin pitch
    All inputs and outputs referenced to positive edge of
    system clock
    Data mask function by UDQM or LDQM
    Internal four banks operation
    Auto refresh and self refresh
    4096 refresh cycles / 64ms
    Programmable Burst Length and Burst Type
    - 1, 2, 4, 8 or Full page for Sequential Burst
    - 1, 2, 4 or 8 for Interleave Burst
    Programmable C A S Latency ; 2, 3 Clocks
    ORDERING INFORMATION
    Note : VDD(Min) of HY57V651620B(L)TC-55/6/7 is 3.135V
    Part No.
    Clock Frequency
    Power
    Organization
    Interface
    Package
    H Y 5 7 V 6 5 1 6 2 0 B T C - 5 5
    1 8 3 M H z
    Normal
    4Banks x 1Mbits
    x16
    L V T T L
    400mil 54pin TSOP II
    H Y 5 7 V 6 5 1 6 2 0 B T C - 6
    1 6 6 M H z
    H Y 5 7 V 6 5 1 6 2 0 B T C - 7
    1 4 3 M H z
    H Y 5 7 V 6 5 1 6 2 0 B T C - 7 5
    1 3 3 M H z
    H Y 5 7 V 6 5 1 6 2 0 B T C - 8
    1 2 5 M H z
    HY57V651620BTC-10P
    1 0 0 M H z
    HY57V651620BTC-10S
    1 0 0 M H z
    H Y 5 7 V 6 5 1 6 2 0 B T C - 1 0
    1 0 0 M H z
    H Y 5 7 V 6 5 1 6 2 0 B L T C - 5 5
    1 8 3 M H z
    Low power
    H Y 5 7 V 6 5 1 6 2 0 B L T C - 6
    1 6 6 M H z
    H Y 5 7 V 6 5 1 6 2 0 B L T C - 7
    1 4 3 M H z
    H Y 5 7 V 6 5 1 6 2 0 B L T C - 7 5
    1 3 3 M H z
    H Y 5 7 V 6 5 1 6 2 0 B L T C - 8
    1 2 5 M H z
    HY57V651620BLTC-10P
    1 0 0 M H z
    HY57V651620BLTC-10S
    1 0 0 M H z
    H Y 5 7 V 6 5 1 6 2 0 B L T C - 1 0
    1 0 0 M H z
    相關(guān)PDF資料
    PDF描述
    HY57V651620BLTC-75 4 Banks x 1M x 16Bit Synchronous DRAM
    HY57V651620BLTC-8 4 Banks x 1M x 16Bit Synchronous DRAM
    HY57V651620BTC-10 4 Banks x 1M x 16Bit Synchronous DRAM
    HY57V651620BTC-10P 4 Banks x 1M x 16Bit Synchronous DRAM
    HY57V651620BTC-10S 4 Banks x 1M x 16Bit Synchronous DRAM
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    HY57V651620BLTC-75 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM
    HY57V651620BLTC-8 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM
    HY57V651620BLTC-I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|6/7/75/10P/10S|SDR SDRAM - 64M
    HY57V651620BLTC-P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM
    HY57V651620BLTC-S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM