- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385423 > HY57V651620BLTC-10 (HYNIX SEMICONDUCTOR INC) 4 Banks x 1M x 16Bit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY57V651620BLTC-10 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4 Banks x 1M x 16Bit Synchronous DRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | HY57V651620BLTC-10 |
HY57V651620B
Rev. 1.9/Apr.01
8
AC CHARACTERISTICS I
Note :
1. A new command can be given tRRC after self refresh exit
Parameter
S y m b o l
-55
-6
-7
-75
-8
-10P
-10S
- 1 0
Unit
Note
Min
M a x
Min
M a x
Min
Max
Min
M a x
Min
M a x
Min
M a x
Min
M a x
Min
M a x
R A S Cycle Time
Operation
t
R C
55
-
60
-
70
-
65
-
6 8
-
70
-
7 0
-
80
-
ns
Auto Refresh
t
R R C
60
-
60
-
702
-
65
-
6 8
-
70
-
7 0
-
96
-
ns
R A S to C A S Delay
t
R C D
16.5
-
18
-
20
-
20
-
2 0
-
20
-
2 0
-
30
-
ns
R A S Active Time
t
R A S
38.5
100K
42
1 0 0 K
42
120K
45
1 0 0 K
4 8
100K
50
1 0 0 K
5 0
100K
50
1 0 0 K
ns
R A S Precharge Time
t
R P
16.5
-
18
-
20
-
20
-
2 0
-
20
-
2 0
-
30
-
ns
R A S to R A S Bank Active Delay
t
R R D
11
-
12
-
14
-
15
-
1 6
-
20
-
2 0
-
20
-
ns
C A S to C A S Delay
t
C C D
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
C L K
Write Command to Data-In Delay
t
W T L
0
-
0
-
0
-
0
-
0
-
0
-
0
-
0
-
C L K
Data-In to Precharge Command
t
D P L
2
-
2
-
1
-
2
-
2
-
1
-
1
-
1
-
C L K
Data-In to Active Command
t
D A L
5
-
5
-
4
-
5
-
5
-
3
-
3
-
4
-
C L K
DQM to Data-Out Hi-Z
t
D Q Z
2
-
2
-
2
-
2
-
2
-
2
-
2
-
2
-
C L K
DQM to Data-In Mask
t
D Q M
0
-
0
-
0
-
0
-
0
-
0
-
0
-
0
-
C L K
M R S t o N e w C o m m a n d
t
M R D
2
-
2
-
1
-
2
-
2
-
2
-
2
-
2
-
C L K
Precharge to
Data Output Hi-Z
C A S Latency = 3
t
P R O Z 3
3
-
3
-
3
-
3
-
3
-
3
-
3
-
3
-
C L K
C A S Latency = 2
t
P R O Z 2
2
-
2
-
2
-
2
-
2
-
2
-
2
-
2
-
C L K
Power Down Exit Time
t
P D E
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
C L K
Self Refresh Exit Time
t
S R E
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
C L K
1
Refresh Time
t
R E F
-
6 4
-
64
-
6 4
-
64
-
64
-
64
-
64
-
64
m s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V651620BLTC-10P | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10S | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-55 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-6 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-7 | 4 Banks x 1M x 16Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V651620BLTC-10P | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10S | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-55 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-6 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-7 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。