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參數資料
| 型號： | HY57V641620ET-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數： | 9/13頁 |
| 文件大小： | 122K |
| 代理商： | HY57V641620ET-7 |
Rev. 1.5 / Feb. 2005
9
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620E(L/S)T(P) Series
DC CHARACTERISTICS II
(T
A
= 0 to 70
o
C
)
Note:
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HY57V641620ET(P) Series: Normal Power
HY57V641620ELT(P) Series: Low Power
HY57V641620EST(P) Series: Super Low Power
Parameter
Symbol
Test Condition
Speed
Unit
Note
5
6
7
H
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥
tRC(min), IOL=0mA
120 110 100 100
mA
1
Precharge Standby Cur-
rent
in Power Down Mode
IDD2P
CKE
≤
VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
≤
VIL(max), tCK =
∞
2
mA
Precharge Standby Cur-
rent
in Non Power Down
Mode
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK = 15ns
Input signals are changed one time during
2clks.
All other pins
≥
VDD-0.2V or
≤
0.2V
18
mA
IDD2NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
15
Active Standby Current
in Power Down Mode
IDD3P
CKE
≤
VIL(max), tCK = 15ns
3
mA
IDD3PS
CKE
≤
VIL(max), tCK =
∞
3
Active Standby Current
in Non Power Down
Mode
IDD3N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK = 15ns
Input signals are changed one time during
2clks.
All other pins
≥
VDD-0.2V or
≤
0.2V
40
mA
IDD3NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
35
Burst Mode Operating
Current
IDD4
tCK
≥
tCK(min), IOL=0mA
All banks active
120 110 100 100
mA
1
Auto Refresh Current
IDD5
tRC
≥
tRC(min), All banks active
170 160 150 150
mA
2
Self Refresh Current
IDD6
CKE
≤
0.2V
Normal
1
mA
3
Low power
400
uA
Super Low
power
300
uA
3, 4
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V641620ET-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ELTP-6 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ELTP-7 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ELTP-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ESTP-5 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY57V641620ET-H | 制造商:SK Hynix Inc 功能描述:SDRAM, 4M x 16, 54 Pin, Plastic, TSOP |
| HY57V641620FTP-6-C | 制造商:SK Hynix Inc 功能描述: |
| HY57V641620FTP-6DR-C | 制造商:SK Hynix Inc 功能描述: |
| HY57V641620FTP-7DR-C | 制造商:SK Hynix Inc 功能描述: |
| HY57V641620FTP-H-C | 制造商:SK Hynix Inc 功能描述: |
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