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參數(shù)資料
| 型號： | HY57V641620ET-7 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 122K |
| 代理商： | HY57V641620ET-7 |
Rev. 1.5 / Feb. 2005
12
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620E(L/S)T(P) Series
COMMAND TRUTH TABLE
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
ADDR
A10/ AP
BA
Note
Mode Register Set
H
X
L
L
L
L
X
OP code
No Operation
H
X
H
X
X
X
X
X
L
H
H
H
Bank Active
H
X
L
L
H
H
X
RA
V
Read
H
X
L
H
L
H
X
CA
L
V
Read
charge
with
Autopre-
H
Write
H
X
L
H
L
L
X
CA
L
V
Write
charge
with
Autopre-
H
Precharge All Banks
H
X
L
L
H
L
X
X
H
X
Precharge
Bank
selected
L
V
Burst Stop
H
X
L
H
H
L
X
X
DQM
H
X
V
X
Auto Refresh
H
H
L
L
L
H
X
X
Burst-Read-Single-
WRITE
H
X
L
L
L
L
X
A9 ball High
(Other balls OP code)
MRS
Mode
Self Refresh
1
Entry
H
L
L
L
L
H
X
X
Exit
L
H
H
X
X
X
X
L
H
H
H
Precharge
power down
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
H
H
H
Clock
Suspend
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V641620ET-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ELTP-6 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ELTP-7 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ELTP-H | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
| HY57V641620ESTP-5 | 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V641620ET-H | 制造商:SK Hynix Inc 功能描述:SDRAM, 4M x 16, 54 Pin, Plastic, TSOP |
| HY57V641620FTP-6-C | 制造商:SK Hynix Inc 功能描述: |
| HY57V641620FTP-6DR-C | 制造商:SK Hynix Inc 功能描述: |
| HY57V641620FTP-7DR-C | 制造商:SK Hynix Inc 功能描述: |
| HY57V641620FTP-H-C | 制造商:SK Hynix Inc 功能描述: |
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