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參數(shù)資料
| 型號： | HY57V281620ETP-5 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 126K |
| 代理商： | HY57V281620ETP-5 |
Rev. 1.1 / J an. 2005
7
Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620E(L)T(P) Series
ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
(T
A
= 0 to 70
o
C
)
Note: 1. All voltages are referenced to V
SS
= 0V
2. V
IH
(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. V
IL
(min) is acceptable -2.0V AC pulse width with <=3ns of duration
AC OPERATING TEST CONDITION
(T
A
= 0 to 70
o
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Note 1.
Parameter
Symbol
TA
Rating
0 ~ 70
Unit
o
C
o
C
V
V
mA
W
o
C / Sec
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature / Time
TSTG
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 / 10
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Parameter
Symbol
V
DD,
V
DDQ
V
IH
V
IL
Min.
3.0
2.0
-0.3
Typ
3.3
3.0
-
Max
3.6
Unit
V
V
V
Note
1
1, 2
1, 3
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
DDQ +
0.3
0.8
Parameter
Symbol
V
IH
/ V
IL
V
trip
t
R
/ t
F
V
outref
CL
Value
2.4 / 0.4
1.4
1
1.4
50
Unit
V
V
ns
V
pF
Note
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
1
Z0 = 50
Output
Output
Vtt = 1.4V
50pF
RT = 50
Vtt = 1.4V
50pF
DC Output Load Circuit
AC Output Load Circuit
RT = 500
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