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參數(shù)資料
| 型號： | HY57V161610ETP-I |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| 中文描述： | 2銀行x為512k × 16位同步DRAM |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 574K |
| 代理商： | HY57V161610ETP-I |
HY57V161610D-I
Rev. 0.3/Mar. 02
6
DC CHARACTERISTICS II
(TA= -40
°
C
to 85
°
C
, V
DD
=3.0V to
3.6V, V
SS
=0V
Note1,2
)
Note :
1.V
DD
(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns.
2.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open.
Parameter
Symbol
Test Condition
Speed
Unit
Note
-55I
-6I
-7I
-10I
Operating Current
IDD1
Burst Length=1, One bank active
tRAS
≥
tRAS(min),tRP
≥
tRP(min),
IO=0mA
130
120
110
110
mA
Precharge Standby
Current
in power down mode
IDD2P
CKE
≤
VIL(max), tCK = min.
1
mA
IDD2PS
CKE
≤
VIL(max), tCK =
∞
1
Precharge Standby
Current
in non power down
mode
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK =
min
Input signals are changed one time during
2Clks. All other pins
≥
VDD-0.2V or
≤
0.2V
20
mA
IDD2NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable.
15
Active Standby Current
in power down mode
IDD3P
CKE
≤
VIL(max), tCK = min
3.0
mA
IDD3PS
CKE
≤
VIL(max), tCK =
∞
3.0
Active Standby Current
in non power down
mode
IDD3N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK =
min
Input signals are changed one time during
2CLKs. All other pins
≥
VDD-0.2V or
≤
0.2V
50
mA
IDD3NS
CKE
≥
VIH(min), tCK =
∞
Input signals are stable
30
Burst Mode Operating
Current
IDD4
tCK
≥
tCK(min),
tRAS
≥
tRAS(min), IO=0mA
All banks active
CL=3
130
120
110
90
mA
2
CL=2
110
110
110
-
Auto Refresh Current
IDD5
tRRC
≥
tRRC(min), All banks active
130
110
110
110
mA
Self Refresh Current
IDD6
CKE
≤
0.2V
2
mA
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相關代理商/技術參數(shù) |
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|---|---|
| HY57V16161TC-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
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| HY57V16161TC-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY57V164010ALTC-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HY57V164010ALTC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
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