參數(shù)資料
型號: HY51V64400JC60
英文描述: x4 Fast Page Mode DRAM
中文描述: x4快速頁面模式的DRAM
文件頁數(shù): 9/11頁
文件大小: 94K
代理商: HY51V64400JC60
HY51V(S)16400HG/HGL
Rev.0.1/Apr.01
9
Notes :
1. AC measurements assume t
T
= 5ns
2. AC initial pause of 200us is required after power up followed by a minimum of eight initialization cycles
( any combination of cycles containing /RAS-only refresh or /CAS-before-/RAS refresh)
3. Only row address is indispensable on address A10 and A11
4. Operation with the t
RCD
(max) limit insures that t
RAC
(max) can be met, t
RCD
(max) is specified as a
reference point only : if t
RCD
is greater than the specified t
RCD
(max) limit, then access time is
controlled exclusively by t
CAC
.
5. Operation with the t
RAD
(max) limit insures that t
RAC
(max) can be met, t
RAD
(max) is specified as a
reference point only : if t
RAD
is greater than the specified t
RAD
(max) limit, then access time is
controlled exclusively by t
AA
.
6. Either t
ODD
or t
CDD
must be satisfied.
7. Either t
DZO
or t
DZC
must be satisfied.
8. V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals, also transition times
are measured between V
IH
(min) and V
IL
(max)
9. Assumes that t
RCD
<=t
RCD
(max) and t
RAD
<=t
RAD
(max). If t
RCD
or t
RAD
is greater than the maximum
recommended value shown in this table, t
RAC
exceeds the value shown
10. Measured with a load circuit equivalent to 1 TTL loads and 100pF.( V
OH
=2.0V, V
OL
=0.8V)
11. Assumes that t
RCD
>=t
RCD
(max) and t
RCD
+ t
CAC
(max) >= t
RAD
+ t
AA
(max)
12. Assumes that t
RAD
>=t
RAD
(max) and t
RCD
+ t
CAC
(max) <= t
RAD
+ t
AA
(max)
13. Either t
RCH
of t
RRH
must be satified for a read cycles
14. t
OFF
(max), t
OEZ
(max), t
OFR
(max) and t
WEZ
(max) define the time at which the outputs achieve the
open circuit condition and is not referenced to output voltage levels
15. t
WCS
, t
RWD
, t
CWD
, t
AWD
and t
CPW
are not restrictive operating parameters. They are included in
the data sheet as electrical characteristics only : If t
WCS
>=t
WCS
(min), the cycle is an early write
cycle and the data out pin will remain open circuit(high impedance) throughout the entire cycle :
If t
RWD
>=t
RWD
(min), t
CWD
>=t
CWD
(min), t
AWD
>=t
AWD
(min), the cycle is a read-modify-write and
the data output will contain data read from the selected cell : if neither of the above sets of conditions
is satified, the condition of the data out (at access time) is indeterminate.
16. These parameters are referenced to /CAS leading edge in early write cycles and to /WE leading edge
in delayed write or read-modify-write cycles
17. t
RASP
defines /RAS pulse width in Fast p
age mode cycles
相關(guān)PDF資料
PDF描述
HY51V64400JC70 x4 Fast Page Mode DRAM
HY51V64400LJC60 x4 Fast Page Mode DRAM
HY51V64400LJC70 x4 Fast Page Mode DRAM
HY51V64400LTC60 x4 Fast Page Mode DRAM
HY51V64400LTC70 x4 Fast Page Mode DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY51V65164ATC-60 制造商:Hyundai 功能描述:
HY52 制造商:AEARO 功能描述:HYGIENE KIT OPTIME II DEFENDER 制造商:3M Electronic Products Division 功能描述:Hygiene Kit for Optime II Ear Defender
HY5203-015M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC
HY5203-015R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC
HY5203-015Z 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC