參數(shù)資料
型號(hào)： HY29F400BT-45
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： x8/x16 Flash EEPROM
中文描述： 256K X 16 FLASH 5V PROM, 45 ns, PDSO48
封裝： TSOP-48
文件頁(yè)數(shù)： 14/40頁(yè)
文件大?。?/td> 509K
代理商： HY29F400BT-45
14
Rev. 5.2/May 01
HY29F400
START
YES
Erase An
Additional Sector
Check Erase Status
(See Write Operation Status
Section)
Setup First (or Next) Sector
Address for Erase Operation
ERASE COMPLETE
Write First Five Cycles of
SECTOR ERASE
Command Sequence
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sector Erase
Time-out (DQ[3])
Expired
NO
YES
NO
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
Sectors which require erasure
but which were not specified in
this erase cycle must be erased
later using a new command
sequence
Figure 6. Sector Erase Procedure
additional sector erase data cycles. Once the sec-
tor erase operation itself has begun, only the Erase
Suspend command is valid. All other commands
are ignored.
As for the Chip Erase command, note that a hard-
ware reset immediately terminates the erase op-
eration. To ensure data integrity, the aborted Sec-
tor Erase command sequence should be reissued
once the reset operation is complete.
When the Automatic Erase algorithm terminates,
the device returns to the Read mode. Several
methods are provided to allow the host to deter-
mine the status of the erase operation, as de-
scribed in the Write Operation Status section.
Figure 6 illustrates the Sector Erase procedure.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system
to interrupt a sector erase operation to read data
from, or program data to, any sector not being
erased. The command causes the erase opera-
tion to be suspended in all sectors selected for
erasure. This command is valid only during the
sector erase operation, including during the 50 μs
time-out period at the end of the initial command
sequence and any subsequent sector erase data
cycles, and is ignored if it is issued during chip
erase or programming operations.
The HY29F400 requires a maximum of 20 μs to
suspend the erase operation if the Erase Suspend
command is issued during active sector erasure.
However, if the command is written during the time-
out, the time-out is terminated and the erase op-
eration is suspended immediately. Any subse-
quent attempts to specify additional sectors for
erasure by writing the sector erase data cycle (SA/
0x30) will be interpreted as the Erase Resume
command (XXX/0x30), which will cause the Auto-
matic Erase algorithm to begin its operation. Note
that any other command during the time-out will
reset the device to the Read mode.
Once the erase operation has been suspended,
the system can read array data from or program
data to any sector not selected for erasure. Nor-
mal read and write timings and command defini-
tions apply. Reading at any address within erase-
suspended sectors produces status data on
DQ[7:0]. The host can use DQ[7], or DQ[6] and
DQ[2] together, to determine if a sector is actively
erasing or is erase-suspended. See
“
Write Op-
eration Status
”
for information on these status bits.
相關(guān)PDF資料
PDF描述
HY29F400BT-55 x8/x16 Flash EEPROM
HY29F400BT-70 x8/x16 Flash EEPROM
HY29F400BT-90 x8/x16 Flash EEPROM
HY29F400TG-45 x8/x16 Flash EEPROM
HY29F400TG-55 x8/x16 Flash EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY29F400BT55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400BT-55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM
HY29F400BT70 制造商:HYUNDAI 功能描述:New
HY29F400BT-70 制造商:Hyundai 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP
HY29F400BT90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
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