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參數(shù)資料
| 型號： | HY29F400BT-55 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | x8/x16 Flash EEPROM |
| 中文描述： | 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 1/40頁 |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F400BT-55 |
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KEY FEATURES
5 Volt Read, Program, and Erase
– Minimizes system-level power requirements
High Performance
– Access times as fast as 45 ns
Low Power Consumption
– 20 mA typical active read current in byte
mode, 28 mA typical in word mode
– 30 mA typical program/erase current
– 5 μA maximum CMOS standby current
Compatible with JEDEC Standards
– Package, pinout and command-set
compatible with the single-supply Flash
device standard
– Provides superior inadvertent write
protection
Sector Erase Architecture
– Boot sector architecture with top and
bottom boot block options available
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and seven 64 Kbyte sectors in byte mode
– One 8 Kword, two 4 Kword, one 16 Kword
and seven 32 Kword sectors in word mode
– A command can erase any combination of
sectors
– Supports full chip erase
Erase Suspend/Resume
– Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
Sector Protection
– Any combination of sectors may be
locked to prevent program or erase
operations within those sectors
Temporary Sector Unprotect
– Allows changes in locked sectors
(requires high voltage on RESET# pin)
Internal Erase Algorithm
– Automatically erases a sector, any
combination of sectors, or the entire chip
Internal Programming Algorithm
– Automatically programs and verifies data
at a specified address
Fast Program and Erase Times
– Byte programming time: 7 μs typical
– Sector erase time: 1.0 sec typical
– Chip erase time: 11 sec typical
Data# Polling and Toggle Status Bits
– Provide software confirmation of
completion of program or erase
operations
Ready/Busy# Output (RY/BY#)
– Provides hardware confirmation of
completion of program and erase
operations
100,000 Program/Erase Cycles Minimum
Space Efficient Packaging
– Available in industry-standard 44-pin
PSOP and 48-pin TSOP and reverse
TSOP packages
Revision 5.2, May 2001
GENERAL DESCRIPTION
The HY29F400 is a 4 Megabit, 5 volt only CMOS
Flash memory organized as 524,288 (512K) bytes
or 262,144 (256K) words. The device is offered in
industry-standard 44-pin PSOP and 48-pin TSOP
packages.
The HY29F400 can be programmed and erased
in-system with a single 5-volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 55 ns over
the full operating voltage range of 5.0 volts ± 10%
are offered for timing compatibility with the zero
wait state requirements of high speed micropro-
A[17:0]
18
CE#
OE#
RESET#
BYTE#
WE#
8
7
DQ[7:0]
DQ[14:8]
DQ[15]/A-1
RY/BY#
LOGIC DIAGRAM
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400BT-70 | x8/x16 Flash EEPROM |
| HY29F400BT-90 | x8/x16 Flash EEPROM |
| HY29F400TG-45 | x8/x16 Flash EEPROM |
| HY29F400TG-55 | x8/x16 Flash EEPROM |
| HY29F400TG-70 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F400BT70 | 制造商:HYUNDAI 功能描述:New |
| HY29F400BT-70 | 制造商:Hyundai 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
| HY29F400BT90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT-90 | 制造商:HYUNDAI 功能描述:NOR Flash, 256K x 16, 48 Pin, Plastic, TSSOP |
| HY29F400TG45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
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