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參數(shù)資料
| 型號(hào)： | HY29F400BR45 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁(yè)數(shù)： | 5/40頁(yè) |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F400BR45 |
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5
Rev. 5.2/May 01
HY29F400
MEMORY ARRAY ORGANIZATION
The 4 Mbit Flash memory array is organized into
11 blocks called
sectors
(S0, S1, . . . , S10). A
sector is the smallest unit that can be erased and
which can be protected to prevent accidental or
unauthorized erasure. See the
‘
Bus Operations
’
and
‘
Command Definitions
’
sections of this docu-
ment for additional information on these functions.
In the HY29F400, four of the sectors, which com-
prise the
boot block
, vary in size from 8 to 32
Kbytes (4 to 16 Kwords), while the remaining
seven sectors are uniformly sized at 64 Kbytes
(32 Kwords). The boot block can be located at
the bottom of the address range (HY29F400B) or
at the top of the address range (HY29F400T).
Table 1. HY29F400 Memory Array Organization
Notes:
1. X indicates Don
’
t Care.
2. Address in Byte Mode is A[17:-1].
3. Address in Word Mode is A[17:0].
BUS OPERATIONS
Device bus operations are initiated through the
internal command register, which consists of sets
of latches that store the commands, along with
the address and data information, if any, needed
to execute the specific command. The command
register itself does not occupy any addressable
memory location. The contents of the command
register serve as inputs to an internal state ma-
chine whose outputs control the operation of the
device. Table 2 lists the normal bus operations,
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1
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[
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1
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[
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1
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0
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0
1
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X
X
X
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X
X
X
[
A
0
1
2
3
4
5
6
7
8
9
0
1
0
S
1
S
2
S
3
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4
S
5
S
6
S
7
S
8
S
9
S
1
S
S
S
S
S
S
S
S
S
S
S
S
2
2
2
2
2
2
2
6
3
6
3
6
3
6
3
6
3
6
3
6
3
6
1
3
4
4
8
1
8
1
4
4
1
3
3
6
3
6
3
6
3
6
3
6
3
6
3
6
F
F
F
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7
9
B
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3
5
7
F
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F
F
F
F
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0
1
2
3
4
5
6
7
7
7
7
0
0
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0
1
2
3
4
5
6
7
x
x
x
x
x
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x
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-
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0
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0
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0
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0
0
0
0
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0
0
0
0
0
0
0
0
0
0
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0
0
0
0
0
8
A
C
0
4
6
8
0
0
0
0
0
0
0
0
1
2
3
4
5
6
7
7
7
7
0
0
0
0
1
2
3
4
5
6
7
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
F
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F
F
F
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F
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F
F
F
F
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F
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F
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F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
7
F
7
F
7
F
7
B
C
D
F
1
2
3
7
F
7
F
7
F
7
F
0
0
1
1
2
2
3
3
3
3
3
0
0
0
0
0
1
1
2
2
3
3
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
8
0
8
0
8
0
8
C
D
E
0
2
3
8
0
8
0
8
0
8
0
0
1
1
2
2
3
3
3
3
3
0
x
0
x
0
x
0
x
0
x
1
x
1
x
2
x
2
x
3
x
3
x
x
x
x
x
x
x
x
x
x
x
x
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
6
2
2
2
2
2
2
2
0
Table 1 defines the sector addresses and corre-
sponding address ranges for the top and bottom
boot block versions of the HY29F400.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400BR55 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR90 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT90 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F400BR-45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BR55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BR70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
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