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參數(shù)資料
| 型號： | HY29F400BR45 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| 中文描述： | 4兆位（512Kx8/256Kx16）5伏只閃存 |
| 文件頁數(shù)： | 10/40頁 |
| 文件大?。?/td> | 509K |
| 代理商： | HY29F400BR45 |
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10
Rev. 5.2/May 01
HY29F400
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Notes:
1. Any number of Flash array read cycles are permitted.
2. Additional data cycles may follow. See text.
3. Any number of Electronic ID read cycles are permitted.
DEVICE COMMANDS
Device operations are initiated by writing desig-
nated address and data
command sequences
into
the device. A command sequence is composed
of one, two or three of the following sub-segments:
an
unlock cycle
, a
command cycle
and a
data
cycle
. Table 4 summarizes the composition of the
valid command sequences implemented in the
HY29F400, and these sequences are fully de-
scribed in Table 5 and in the sections that follow.
Writing incorrect address and data values or writ-
ing them in the improper sequence resets the
HY29F400 to the Read mode.
Read/Reset 1, 2 Commands
The HY29F400 automatically enters the Read
mode after device power-up, after the RESET#
input is asserted and upon the completion of cer-
tain commands. Read/Reset commands are not
required to retrieve data in these cases.
A Read/Reset command must be issued in order
to read array data in the following cases:
If the device is in the Electronic ID mode, a
Read/Reset command must be written to re-
turn to the Read mode. If the device was in the
Erase Suspend mode when the device entered
the Electronic ID mode, writing the Read/Re-
set command returns the device to the Erase
Suspend mode.
A read cycle at address 0xXXX01 returns the
device code:
- HY29F400T = 0x23 in Byte mode, 0x2223 in
Word mode.
- HY29F400B = 0xAB in Byte mode, 0x22AB
in Word mode.
A read cycle containing a sector address (Table
1) in A[17:12] and the address 0x02 in A[7:0]
returns 0x01 if that sector is protected, or 0x00
if it is unprotected.
Table 4. Composition of Command Sequences
Note:
When in the Electronic ID bus operation mode,
the device returns to the Read mode when V
is re-
moved from the A[9] pin. The Read/Reset command is
not required in this case.
If DQ[5] (Exceeded Time Limit) goes High dur-
ing a program or erase operation, writing the
Read/Reset command returns the sectors to
the Read mode (or to the Erase Suspend mode
if the device was in Erase Suspend).
The Read/Reset command may also be used to
abort certain command sequences:
Electronic ID Mode Operation
The Electronic ID mode provides manufacturer and
device identification and sector protection verifi-
cation through identifier codes output on DQ[7:0]
or DQ[15:0]. This mode is intended primarily for
programming equipment to automatically match
a device to be programmed with its correspond-
ing programming algorithm. The Electronic ID in-
formation can also be obtained by the host through
a command sequence, as described in the De-
vice Commands section.
Operation in the Electronic ID mode requires V
ID
on address pin A[9], with additional requirements
for obtaining specific data items as listed in Table
2:
A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F400BR55 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR90 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT70 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BT90 | 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F400BR-45 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BR55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
| HY29F400BR70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory |
| HY29F400BR-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8/x16 Flash EEPROM |
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