參數(shù)資料
型號: HY27US08121B-TPIS
廠商: HYNIX SEMICONDUCTOR INC
元件分類: PROM
英文描述: 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
封裝: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件頁數(shù): 22/40頁
文件大?。?/td> 360K
代理商: HY27US08121B-TPIS
Rev 0.5 / Jul. 2007
29
HY27US(08/16)12(1/2)B Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
System Interface Using CE don’t care
To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below.
So, it is possible to connect NAND Flash to a microporcessor. The only function that was removed from standard NAND
Flash to make CE don’t care read operation was disabling of the automatic sequential read function. (HY27US(08/16)122B)
Figure 19: Program Operation with CE don’t-care.
Figure 20: Read Operation with CE don’t-care.
相關(guān)PDF資料
PDF描述
HY27US08121B-FIB 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63
HY27US081G1MSES 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
HY27US081G1MTCS 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
HY27US081G1MTPMP 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
HY5116100BJ-70 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27US08121M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
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