參數(shù)資料
型號: HY27SSxxx
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁數(shù): 37/43頁
文件大?。?/td> 729K
代理商: HY27SSXXX
Rev 0.6 / Oct. 2004
37
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
System Interface Using CE don’t care
To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below. So, it is possible
to connect NAND Flash to a microprocessor. The only function that was removed from standard NAND Flash to make CE don't care
read operation was disabling of the automatic sequential read function.
Figure 32. Program Operation with CE don’t-care
.
Figure 33. Read Operation with CE don’t-care.
CLE
ALE
I/Ox
CE
WE
CE don't-care
tR
00h
Start Add(4Cycle)
Data Output(sequential)
RE
R/B
CE must be held low during tR.
If sequential row read enabled,
CLE
CE don't-care
CE
WE
ALE
80h
Start Add(4Cycle)
Data Input
Data Input
10h
I/Ox
相關(guān)PDF資料
PDF描述
HY27SS08121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS16121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US08121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27USxxx 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US16121M 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
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