- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385414 > HY27SSxxx (Hynix Semiconductor Inc.) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash PDF資料下載
參數(shù)資料
| 型號(hào)： | HY27SSxxx |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| 中文描述： | 512兆（64Mx8bit / 32Mx16bit）NAND閃存 |
| 文件頁(yè)數(shù)： | 11/43頁(yè) |
| 文件大?。?/td> | 729K |
| 代理商： | HY27SSXXX |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
Rev 0.6 / Oct. 2004
11
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 2. Bus Operation
Note : (1) Only for x16 devices.
(2) WP must be V
IH
when issuing a program or erase command.
Table 3: Address Insertion, x8 Devices
Note: (1). A8 is set Low or High by the 00h or 01h Command, see Pointer Operations section.
(2). Any address input cycles will be ignored with tALS > 0ns.
Table4: Address Insertion, x16 Devices
Note: (1). A8 is Don
'
t Care in x16 devices.
(2). Any address input cycles will be ignored with tALS > 0ns.
(3). A1 is the Least Significant Address for x16 devices.
(4). The 01h Command is not used in x16 devices.
BUS Operation
CE
ALE
CLE
RE
WE
WP
I/O
0
- I/O
7
I/O
8
- I/O
15(1)
Command Input
V
IL
V
IL
V
IH
V
IH
Rising
X
(2)
Command
X
Address Input
V
IL
V
IH
V
IL
V
IH
Rising
X
Address
X
Data Input
V
IL
V
IL
V
IL
V
IH
Rising
X
Data Input
Data Input
Data Output
V
IL
V
IL
V
IL
Falling
V
IH
X
Data Output
Data Output
Write Protect
X
X
X
X
X
V
IL
X
X
Standby
V
IH
X
X
X
X
X
X
X
Bus Cycle
I/O
7
A7
I/O
6
A6
I/O
5
A5
I/O
4
A4
I/O
3
A3
I/O
2
A2
I/O
1
A1
I/O
0
A0
1st Cycle
2nd Cycle
A16
A15
A14
A13
A12
A11
A10
A9
3rd Cycle
A24
A23
A22
A21
A20
A19
A18
A17
4th Cycle
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
A25
Bus Cycle
I/O
8
-I/
O
15
X
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
2
I/O
1
I/O
0
1st Cycle
A7
A6
A5
A4
A3
A2
A1
A0
2nd Cycle
X
A16
A15
A14
A13
A12
A11
A10
A9
3rd Cycle
X
A24
A23
A22
A21
A20
A19
A18
A17
4th Cycle
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
A25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27SS08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27USxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27UA081G1M | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA161G1M | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA1G1M | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UAXXX | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UF081G2A | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。