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參數(shù)資料
| 型號： | HUFA75631S3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs |
| 中文描述： | 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 251K |
| 代理商： | HUFA75631S3ST |
2001 Fairchild Semiconductor Corporation
HUFA75631SK8 Rev. B
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T
JM
, and the
thermal resistance of the heat dissipating path determines the
maximum allowable device power dissipation, P
DM
, in an
application. Therefore the application’s ambient temperature,
T
A
(
o
C), and thermal resistance R
θ
JA
(
o
C/W) must be reviewed
to ensure that T
JM
is never exceeded. Equation 1
mathematically represents the relationship and serves as the
basis for establishing the rating of the part.
In using surface mount devices such as the SOP-8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of P
DM
is complex
and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 20
defines the R
θ
JA
for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. SWITCHING TIME WAVEFORM
Test Circuits and Waveforms
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
(EQ. 1)
PDM
θ
JA
–
(
------------------------------
)
=
HUFA75631SK8
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA75631SK8 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75631SK8T | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO |
| HUFA75637P3 | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75637S3S | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75637S3ST | 功能描述:MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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