參數(shù)資料
型號： HUF76619D3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場效應管)
中文描述： 18 A, 100 V, 0.089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 9/9頁
文件大小： 108K
代理商： HUF76619D3
9
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
SPICE Thermal Model
REV 28August 1999
HUF76619T
CTHERM1 th 6 1.0e-3
CTHERM2 6 5 3.0e-3
CTHERM3 5 4 4.0e-3
CTHERM4 4 3 7.0e-3
CTHERM5 3 2 1.0e-2
CTHERM6 2 tl 5.0e-1
RTHERM1 th 6 9.31e-3
RTHERM2 6 5 8.11e-2
RTHERM3 5 4 2.0e-1
RTHERM4 4 3 4.5e-1
RTHERM5 3 2 7.0e-1
RTHERM6 2 tl 2.0e-1
SABER Thermal Model
SABER thermal model HUF76619T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.0e-3
ctherm.ctherm2 6 5 = 3.0e-3
ctherm.ctherm3 5 4 = 4.0e-3
ctherm.ctherm4 4 3 = 7.0e-3
ctherm.ctherm5 3 2 = 1.0e-2
ctherm.ctherm6 2 tl = 5.0e-1
rtherm.rtherm1 th 6 = 9.31e-3
rtherm.rtherm2 6 5 = 8.11e-2
rtherm.rtherm3 5 4 = 2.0e-1
rtherm.rtherm4 4 3 = 4.5e-1
rtherm.rtherm5 3 2 = 7.0e-1
rtherm.rtherm6 2 tl = 2.0e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76619D3, HUF76619D3S
相關(guān)PDF資料
PDF描述
HUF76619D3S 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場效應管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76619D3S 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76619D3ST 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76629D3 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76629D3S 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76629D3ST 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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