參數(shù)資料
型號： HUF76619D3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(18A, 100V, 0.087Ω N溝道邏輯電平功率MOS場效應管)
中文描述： 18 A, 100 V, 0.089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 2/9頁
文件大?。?/td> 108K
代理商： HUF76619D3
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
100
-
-
V
95
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
nA
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 18A, V
GS
= 10V (Figures 9, 10)
I
D
= 12A, V
GS
= 5V (Figure 9)
I
D
= 12A, V
GS
= 4.5V (Figure 9
1
-
3
V
Drain to Source On Resistance
-
0.065
0.085
-
0.072
0.087
-
0.074
0.089
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-251AA, TO-252AA
-
-
2.0
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
100
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 50V, I
D
= 12A
V
GS
=
4.5V, R
GS
= 12
(Figures 15, 21, 22)
-
-
137
ns
Turn-On Delay Time
-
10
-
ns
Rise Time
-
82
-
ns
Turn-Off Delay Time
-
32
-
ns
Fall Time
-
42
-
ns
Turn-Off Time
-
-
111
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 50V, I
D
= 18A
V
GS
=
10V,
R
GS
= 12
(Figures 16, 21, 22)
-
-
53
ns
Turn-On Delay Time
-
6
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
50
-
ns
Fall Time
-
52
-
ns
Turn-Off Time
-
-
153
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 12A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
24
29
nC
Gate Charge at 5V
-
13
16
nC
Threshold Gate Charge
-
0.74
0.89
nC
Gate to Source Gate Charge
-
2.2
-
nC
Reverse Transfer Capacitance
-
6.7
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
767
-
pF
Output Capacitance
-
138
-
pF
Reverse Transfer Capacitance
-
20
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
=12A
I
SD
= 6A
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
101
ns
Reverse Recovered Charge
Q
RR
-
-
333
nC
HUF76619D3, HUF76619D3S
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76619D3S 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76619D3ST 功能描述:MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76629D3 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76629D3S 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76629D3ST 功能描述:MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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