參數(shù)資料
型號(hào)： HUF76407P3
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(12A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 13 A, 60 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 340K
代理商： HUF76407P3
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
60
-
-
V
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
nA
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 13A, V
GS
= 10V (Figures 9, 10)
I
D
= 8A, V
GS
= 5V (Figure 9)
I
D
= 8A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.077
0.092
-
0.095
0.107
-
0.107
0.117
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-220
-
-
3.94
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
62
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 8A
V
GS
=
4.5V, R
GS
= 32
(Figures 15, 21, 22)
-
-
170
ns
Turn-On Delay Time
-
8
-
ns
Rise Time
-
105
-
ns
Turn-Off Delay Time
-
22
-
ns
Fall Time
-
39
-
ns
Turn-Off Time
-
-
92
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 13A
V
GS
=
10V,
R
GS
= 32
(Figures 16, 21, 22)
-
-
56
ns
Turn-On Delay Time
-
5
-
ns
Rise Time
-
32
-
ns
Turn-Off Delay Time
-
43
-
ns
Fall Time
-
45
-
ns
Turn-Off Time
-
-
132
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 8A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
9.4
11.3
nC
Gate Charge at 5V
-
5.2
6.2
nC
Threshold Gate Charge
-
.36
.43
nC
Gate to Source Gate Charge
-
1.2
-
nC
Gate to Drain “Miller” Charge
-
2.5
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
350
-
pF
Output Capacitance
-
105
-
pF
Reverse Transfer Capacitance
-
23
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 8A
I
SD
= 4A
I
SD
= 8A, dI
SD
/dt = 100A/
μ
s
I
SD
= 8A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
66
ns
Reverse Recovered Charge
Q
RR
-
-
159
nC
HUF76407P3
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HUF76407P3_Q 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76409D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76409D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76409D3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76409D3ST_R4921 制造商:Fairchild Semiconductor Corporation 功能描述:
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