參數(shù)資料
型號(hào)： HUF76139S3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述： 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 6/11頁
文件大?。?/td> 293K
代理商： HUF76139S3S
2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
0
1000
2000
3000
4000
0
5
10
15
20
25
30
C
C
ISS
C
OSS
C
RSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
2
4
6
8
10
0
20
40
60
80
V
DD
= 15V
I
D
= 75A
I
D
= 50A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
V
G
,
Q
g
, GATE CHARGE (nC)
0
200
400
600
800
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
V
GS
= 4.5V, V
DD
= 15V, I
D
= 61A, R
L
= 0.246
t
r
t
f
t
d(OFF)
t
d(ON)
0
100
300
400
500
0
10
20
30
40
50
S
V
GS
= 10V, V
DD
= 15V, I
D
= 75A, R
L
= 0.2
R
GS
, GATE TO SOURCE RESISTANCE (
)
200
t
f
t
r
t
d(OFF)
t
d(ON)
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76139P3, HUF76139S3S
相關(guān)PDF資料
PDF描述
HUF76145P3 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0045 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
HUF76145S3S 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0045 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
HUF76145P3 RF CONNECTOR; SMA MALE, RIGHT ANGLE, CRIMP ATTACHMENT FOR RG55, RG142, RG223 & RG400
HUF76145S3S RF CONNECTOR; SMA FEMALE, 2 HOLE PANEL MOUNT, SOLDER CUP CONTACT
HUF76409D3ST 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76139S3ST 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3STK 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76143P3 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76143S3 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76143S3S 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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