- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384446 > HUF76139S3S (FAIRCHILD SEMICONDUCTOR CORP) 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | HUF76139S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 293K |
| 代理商： | HUF76139S3S |
2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
40
80
120
160
0
1
2
3
4
5
6
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 15V
-40
o
C
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
40
80
120
160
0
1
2
3
4
5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
6
8
10
12
14
2
4
6
8
10
r
D
,
O
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 25A
I
D
= 75A
I
D
= 50A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-60
0
60
120
180
N
O
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
0.4
0.6
0.8
1.0
1.2
-60
0
60
120
180
V
GS
= V
DS
, I
D
= 250
μ
A
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
0.9
1.0
1.1
1.2
-60
0
60
120
180
I
D
= 250
μ
A
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
HUF76139P3, HUF76139S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF76145P3 | 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0045 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76145S3S | 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0045 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應管) |
| HUF76145P3 | RF CONNECTOR; SMA MALE, RIGHT ANGLE, CRIMP ATTACHMENT FOR RG55, RG142, RG223 & RG400 |
| HUF76145S3S | RF CONNECTOR; SMA FEMALE, 2 HOLE PANEL MOUNT, SOLDER CUP CONTACT |
| HUF76409D3ST | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76139S3ST | 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3STK | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76143P3 | 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76143S3 | 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76143S3S | 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。