參數(shù)資料
型號(hào)： HUF76139P3
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管)
中文描述： 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 9/10頁(yè)
文件大?。?/td> 121K
代理商： HUF76139P3
6-162
SABER Electrical Model
REV March 1998
template huf76139 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 3.4e-12, xti = 5.2, cjo = 3.75e-9, tt = 3.8e-8, m = 0.40)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 2.05e-9, is = 1e-30, n = 10, vj = 1.1 m = 0.65)
m..model mmedmod = (type=_n, vto = 1.85, kp = 15, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.18, kp = 115, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.35, kp = 0.01, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.5, voff = -2.5)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -2.5, voff = -5.5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = 0)
c.ca n12 n8 = 3.15e-9
c.cb n15 n14 = 3.15e-9
c.cin n6 n8 = 2.3e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 4e-9
l.lgate n1 n9 = 6e-9
l.lsource n3 n7 = 3e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 9.8e-4, tc2 = -4e-7
res.rdbody n71 n5 = 2.65e-3, tc1 = 2.3e-3, tc2 = -4.2e-6
res.rdbreak n72 n5 = 8.5e-2, tc1 = 0, tc2 = 0
res.rdrain n50 n16 = 0.25e-3, tc1 = 4.75e-2, tc2 = 1e-4
res.rgate n9 n20 = 1
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 60
res.rlsource n3 n7 = 30
res.rslc1 n5 n51 = 1e-6, tc1 = 2e-3, tc2 = 4e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.35e-3, tc1 = 1.45e-3, tc2 = 5e-6
res.rvtemp n18 n19 = 1, tc1 = -1.5e-3, tc2 = 0.5e-9
res.rvthres n22 n8 = 1, tc1 = -2e-3, tc2 = -9e-6
spe.ebreak n11 n7 n17 n18 = 33.45
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/643))** 8.4))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RDBODY
RDBREAK
72
71
HUF76139P3, HUF76139S3S
相關(guān)PDF資料
PDF描述
HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管)
HUF76407D3 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
HUF76407D3S 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
HUF76407P3 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(12A, 60V, 0.107Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
HUF76409D3 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.071Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76139P3_NS2552 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76139S3 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3ST 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3STK 制造商:Rochester Electronics LLC 功能描述:- Bulk
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