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參數(shù)資料
| 型號： | HUF76139P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管) |
| 中文描述： | 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 121K |
| 代理商： | HUF76139P3 |
6-163
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SPICE Thermal Model
REV March 1998
HUF76139
CTHERM1 th 6 500e-2
CTHERM2 6 5 3e-2
CTHERM3 5 4 1e-2
CTHERM4 4 3 3e-2
CTHERM5 3 2 0.35e-1
CTHERM6 2 tl 1
RTHERM1 th 6 2.5e-4
RTHERM2 6 5 5e-4
RTHERM3 5 4 2.8e-3
RTHERM4 4 3 88e-3
RTHERM5 3 2 18e-2
RTHERM6 2 tl 0.5e-1
SABER Thermal Model
Saber thermal model HUF76139
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 500e-2
ctherm.ctherm2 6 5 = 3e-2
ctherm.ctherm3 5 4 = 1e-2
ctherm.ctherm4 4 3 = 3e-2
ctherm.ctherm5 3 2 = 0.35e-1
ctherm.ctherm6 2 tl = 1
rtherm.rtherm1 th 6 = 2.5e-4
rtherm.rtherm2 6 5 = 5e-4
rtherm.rtherm3 5 4 = 2.8e-3
rtherm.rtherm4 4 3 = 88e-3
rtherm.rtherm5 3 2 = 18e-2
rtherm.rtherm6 2 tl = 0.5e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76139P3, HUF76139S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76139S3S | 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0075 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管) |
| HUF76407D3 | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76407D3S | 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76407P3 | 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(12A, 60V, 0.107Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76409D3 | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(17A, 60V, 0.071Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76139P3_NS2552 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76139S3 | 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3ST | 功能描述:MOSFET USE 512-FDB8896 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76139S3STK | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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