參數(shù)資料
型號(hào)： HUF76137S3S
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 75 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 6/10頁(yè)
文件大小： 108K
代理商： HUF76137S3S
6-147
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
C
OSS
3000
2000
0
0
5
15
25
C
2500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1500
30
500
C
ISS
C
RSS
10
20
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 15V
2
50
0
Q
g
, GATE CHARGE (nC)
10
I
D
= 75A
I
D
= 50A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
30
20
40
60
200
20
30
40
50
0
1000
800
400
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
V
GS
= 4.5V, V
DD
= 15V, I
D
= 52A, R
L
= 0.289
600
t
r
t
f
t
d(ON)
t
d(OFF)
100
20
30
40
50
0
400
300
200
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
t
d(OFF)
t
d(ON)
V
GS
= 10V, V
DD
= 15V, I
D
= 75A, R
L
= 0.20
t
r
t
f
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76137P3, HUF76137S3S
相關(guān)PDF資料
PDF描述
HUF76137P3 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76139P3 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76145P3 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0045 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76137S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139P3 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139P3_NS2552 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76139S3 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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