參數(shù)資料
型號： HUF76137S3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 75 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 5/10頁
文件大?。?/td> 108K
代理商： HUF76137S3S
6-146
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
150
o
C
0
2
3
4
5
1
0
30
90
120
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
-40
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
60
V
GS
= 10V
V
GS
= 3.5V
V
GS
= 4V
0
30
90
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
120
I
D
,
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 3V
V
GS
= 4.5V
150
60
8
12
16
20
4
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 75A
I
D
= 50A
I
D
= 25A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
O
)
-60
0
60
120
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
180
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
0.8
1.0
1.2
1.4
1.6
-60
0
60
120
0.4
0.6
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
180
0.8
1.15
1.05
1.00
0.95
0.90
-60
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
180
1.10
HUF76137P3, HUF76137S3S
相關(guān)PDF資料
PDF描述
HUF76137P3 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76139P3 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76145P3 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.0045 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76137S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139P3 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139P3_NS2552 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76139S3 功能描述:MOSFET 75a 30V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76139S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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