參數(shù)資料
型號(hào)： HUF76132SK8
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述： 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： SO-8
文件頁(yè)數(shù)： 5/11頁(yè)
文件大小： 123K
代理商： HUF76132SK8
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
20
30
40
50
1
2
3
4
0
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
150
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
10
20
30
40
50
0.5
1.0
1.5
2.0
0
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
T
A
= 25
o
C
PULSE V
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5V
20
30
40
4
6
8
10
10
2
I
D
= 3.3A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 11.5A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
1.4
1.6
-40
0
40
80
120
160
-80
0.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 11.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
-80
0.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-40
0
40
80
120
160
-80
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76132SK8
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76132SK8T 功能描述:MOSFET USE 512-FDS6690A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76137P3 功能描述:MOSFET 75a 30V 0.009 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76137S3 制造商:Harris Corporation 功能描述:
HUF76137S3S 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76137S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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