參數(shù)資料
型號: HUF76132SK8
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(11.5A, 30V, 0.0115 Ω N溝道邏輯電平功率MOS場效應(yīng)管)
中文描述: 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: SO-8
文件頁數(shù): 3/11頁
文件大?。?/td> 123K
代理商: HUF76132SK8
3
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
11.5A, R
L
= 1.3
,
V
GS
=
10V,
R
GS
= 6.8
(Figures 16, 21, 22)
-
-
70
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
36
-
ns
Turn-Off Delay Time
t
d(OFF)
-
65
-
ns
Fall Time
t
f
-
37
-
ns
Turn-Off Time
t
OFF
-
-
155
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V, I
D
3.3A,
R
L
= 4.5
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
43
52
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
24
29
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.63
1.95
nC
Gate to Source Gate Charge
Q
gs
-
4
-
nC
Reverse Transfer Capacitance
Q
gd
-
10
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
1560
-
pF
Output Capacitance
C
OSS
-
735
-
pF
Reverse Transfer Capacitance
C
RSS
-
150
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 11.5A
-
-
1.25
V
I
SD
= 3.3A
1.1
V
Reverse Recovery Time
t
rr
I
SD
= 3.3A, dI
SD
/dt = 100A/
μ
s
-
-
58
ns
Reverse Recovered Charge
Q
RR
I
SD
= 3.3A, dI
SD
/dt = 100A/
μ
s
-
-
87
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
3
6
9
12
50
75
100
125
150
25
0
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V, R
θ
JA
= 189
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
HUF76132SK8
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