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參數(shù)資料
| 型號： | HUF76112SK8 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場效應管) |
| 中文描述： | 7.5 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 255K |
| 代理商： | HUF76112SK8 |
7
Thermal Resistance vs Mounting Pad Area
The maximum rated junction temperature, T
JM
, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P
DM
, in
an application. Therefore the application’s ambient
temperature, T
A
(
o
C), and thermal resistance R
θ
JA
(
o
C/W)
must be reviewed to ensure that T
JM
is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
In using surface mount devices such as the SO8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of P
DM
is complex
and influenced by many factors:
1. Mountingpadareaontowhichthedeviceisattachedand
whether there is copper on one side or both sides of the
board.
2. Thenumberofcopperlayersandthethicknessoftheboard.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 23 defines the R
θ
JA
for the device as a function of the top copper (component side)
area. This is for a horizontally positioned FR-4 board with 1oz
copper after 1000 seconds of steady state power with no air
flow. This graph provides the necessary information for
calculation of the steady state junction temperature or power
dissipation. Pulse applications can be evaluated using the
Intersil device Spice thermal model or manually utilizing the
normalized maximum transient thermal impedance curve.
Displayed on the curve are R
θ
JA
values listed in the Electrical
Specifications table. The points were chosen to depict the
compromise between the copper board area, the thermal
resistance and ultimately the power dissipation, P
DM
.
Thermal resistances corresponding to other copper areas can
be obtained from Figure 23 or by calculation using Equation 2.
R
θ
JA
is defined as the natural log of the area times a coefficient
added to a constant. The area, in square inches is the top
copper area including the gate and source pads.
ln
×
–
=
The transient thermal impedance (Z
θ
JA
) is also effected by
varied top copper board area. Figure 24 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package. Therefore,
CTHERM1 through CTHERM5 and RTHERM1 through
RTHERM5 remain constant for each of the thermal models. A
listing of the model component values is available in Table 1.
(EQ. 1)
PDM
θ
JA
–
(
------------------------------
)
=
(EQ. 2)
R
θ
JA
83.2
23.6
Area
(
)
FIGURE 23. THERMAL RESISTANCE vs MOUNTING PAD AREA
120
160
200
240
0.1
1.0
80
0.01
R
θ
JA
= 83.2 - 23.6*
ln
(AREA)
152
o
C/W - 0.054in
2
189
o
C/W - 0.0115in
2
θ
J
(
o
C
AREA, TOP COPPER AREA (in
2
)
FIGURE 24. THERMAL IMPEDANCE vs MOUNTING PAD AREA
30
60
90
120
150
0
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
COPPER BOARD AREA - DESCENDING ORDER
0.04 in
2
0.28 in
2
0.52 in
2
0.76 in
2
1.00 in
2
I
o
C
HUF76112SK8
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