參數(shù)資料
型號(hào)： HUF76112SK8
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 7.5 A, 30 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 2/12頁
文件大?。?/td> 255K
代理商： HUF76112SK8
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±
16V
30
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 7.5A, V
GS
= 10V (Figures 9, 10)
I
D
= 4.0A, V
GS
= 5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.022
0.026
-
0.027
0.033
SWITCHING SPECIFICATIONS
(V
GS
= 5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
= 4.0A
V
GS
=
5V,
R
GS
= 20
(Figures 15, 21, 22)
-
-
77
ns
Turn-On Delay Time
-
11
-
ns
Rise Time
-
40
-
ns
Turn-Off Delay Time
-
35
-
ns
Fall Time
-
32
-
ns
Turn-Off Time
-
-
100
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
= 7.5A
V
GS
=
10V,
R
GS
= 20
(Figures 16, 21, 22)
-
-
75
ns
Turn-On Delay Time
-
7.2
-
ns
Rise Time
-
43
-
ns
Turn-Off Delay Time
-
52
-
ns
Fall Time
-
45
-
ns
Turn-Off Time
-
-
145
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Q
g(TOT)
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,
I
D
= 7.5A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
15
18
nC
Total Gate Charge at 5V
-
7.2
8.7
nC
Threshold Gate Charge
-
0.74
0.9
nC
Gate to Source Gate Charge
-
2.1
-
nC
Gate to Drain “Miller” Charge
-
2.9
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figures 13)
-
725
-
pF
Output Capacitance
-
325
-
pF
Reverse Transfer Capacitance
-
36
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 7.5A
I
SD
= 4A
I
SD
= 7.5A, dI
SD
/dt = 100A/
μ
s
I
SD
= 7.5A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
25
ns
Reverse Recovered Charge
Q
RR
-
-
14
nC
HUF76112SK8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76112SK8T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SO
HUF76113DK8 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113DK8T 功能描述:MOSFET USE 512-FDS6912A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8 功能描述:MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76113SK8T 功能描述:MOSFET USE 512-FDS6612A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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